| 摘要 |
PROBLEM TO BE SOLVED: To project a reticle pattern which high accuracy onto a wafer by providing a frame means which comprises an alignment pattern means between an illuminating means for illuminating a substrate with a charged particle beam and a substrate stage means for holding the substrate for movement. SOLUTION: There is provided a drift pattern from 4, which is a frame means where drift detection patterns 41a-41l are so formed so to correspond to an alignment for pattern means for shaping the charged particle beam from a lighting frame 3 between the lighting frame 3 for illuminating a reticle, which is a substrate with charged particle beam and a reticle stage which holds the reticle for movement. The drift detection patterns 41g-41l of the frame 4 are provided at a frame opening 42 at symmetrical positions with the drift detection patterns 41a-41f. Thus, the pattern of reticle is projected with high accuracy onto a wafer.
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