| 摘要 |
PROBLEM TO BE SOLVED: To obtain a stable profile of a nucleus formation center for deposition of oxygen by forming nitrogen incorporated by substitution or interruption, or a vacant site in a crystal lattice defect. SOLUTION: Heat treatment is conducted for 1-360 sec at a temperature of 800-1,300 deg.C to manufacture a semiconductor disk having a constitution that is doped with nitrogen in a nonuniform distribution having a front side surface 1, a rear side surface 2, an upper layer 3, a lower layer 4, and an inner layer 5 located at the lower side of the upper layer 3, and inner side layer 6 located at the upper side of the lower layer 4, a central region 7 between the inner side layers 5 and 6, nitrogen is incorporated by substitution or interruption to constitute a crystal lattice defect. Thus a stable profile of a nucleation center for oxygen deposition can be obtained and the internal getter of impurities can be assured.
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