| 摘要 |
PROBLEM TO BE SOLVED: To enhance light receiving sensitivity to the light in a specified wavelength zone by employing a composition of InGaN in the quantum well layer included in the quantum well structure of a light receiving layer and a composition of InGaAlN in the barrier layer. SOLUTION: In the structure of a light receiving element, a GaN buffer layer 12, a GaN:Si layer 13, an MQW light receiving layer 14 having multi- quantum well structure including 20 periods of InGaN quantum well layer and InGaAlN barrier layer, and a GaN:Mg layer 15 are formed sequentially on an n-type 6H-SiC substrate 11. In the MQW structure of InGaN layer and InGaAlN layer, a large compressive strain is applied to the InGaN layer due to difference of lattice constant between the InGaN layer and the InGaAlN layer and a large internal field is generated in the InGaN layer through piezoelectric effect caused by the compressive strain. The internal field enhances light receiving sensitivity to the light in a wavelength zone of 390-500 nm.
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