发明名称 DEVICE FOR QUANTITATIVE DETECTION OF COPPER IN SILICON BY TRANSIENT IONIC DRIFT AND METHOD USING SAME
摘要 <p>The invention concerns an analysing device for producing measurements using transient ionic drift technique and an analysis method using same. The device for the quantitative detection of copper in silicon by transient ionic drift essentially comprises means for heating and means for rapidly cooling the sample to be analysed, an electrode for measuring the electrical capacity of the sample and a unit generating an energising signal and processing the measuring electric signal. The invention is characterised in that the means for heating (2) the sample (4) to be analysed consists in at least a halogen lamp, the means for rapidly cooling (3) the sample (4) to be analysed is by water cooling, and the electrode for measuring the sample (4) to be analysed is a mercury electrode.</p>
申请公布号 WO2001003177(A1) 申请公布日期 2001.01.11
申请号 FR2000001837 申请日期 2000.06.29
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