| 摘要 |
The invention relates to a method for producing trenches (13) for storage capacitors of DRAM semiconductor memories by plasma-etching semiconductor substrates (10). According to said method, a partial trench area (13-1) is produced with a cross-sectional profile which transforms from an essentially constant profile into a larger profile. The surface of said partial trench area is passivated and the etching/passivating process is continued periodically in order to form further partial trench areas (13-2, ..., 13-k), until a predetermined overall trench depth is reached. |
