| 摘要 |
The invention relates to a diode, comprising a semiconductor substrate which is located between two metallic electrodes (5, 6). Said substrate has a highly doped first zone (3) which forms an ohmic junction with the first electrode (6), a second zone (1), weakly doped with the same conductivity type, which forms a rectifying junction to a second electrode (5) and a third zone (2) which is doped with a weaker concentration of the same conductivity type than the second zone (1). The third zone (2) separates the first and second zones (1, 3) from each other and the second zone (1) is enclosed between the second electrode (5) and the third zone (2).
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