| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device, which includes field-effect transistors which are respectively operated at a plurality of different voltage levels, where a mixed mounting with a logic block is made possible and includes a nonvoltatile memory transistor. SOLUTION: A semiconductor device has a memory region 4000 and first, second and third transistor regions 1000, 2000 and 3000, which respectively includes field-effect transistors which are operated at different voltage levels. The region 4000 comprises a nonvolatile memory transistor 400 of a split gate structure, the region 1000 comprises a first voltage transistor 100 which is operated at a first voltage level, the region 2000 comprises a second voltage transistor 200 which is operated at a second voltage level, and the region 3000 comprises a third voltage transistor 300 which is operated at a third voltage level. A gate insulation film 22 of the transistor 200 consists of at least two layers of insulating layers 22a and 22b. The layer 22b is formed through the same process as the forming process of a gate insulating layer 20 of the transistor 100.
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