| 摘要 |
PROBLEM TO BE SOLVED: To make small the quantity of remaining matters and reduce generated polymer by-products by exposing a semiconductor structure to a plasma generat ed from the source gas comprising an oxygen-containing gas, a nitrogen- containing gas, and a reaction gas consisting of hydrogen, carbon, and fluorine. SOLUTION: A semiconductor structure is exposed to a plasma generated from a source gas, comprising an oxygen-containing gas, a nitrogen-containing gas, and a reaction gas containing hydrogen, carbon, and fluorine. After a dielectric etching process 40, there is performed an post-etching processing which comprises a single-processing process 44 or comprises the process 44 including additionally a flashing step 42. This post-etching processing is performed in the same chamber as that in the dielectric etching process 40. In the flashing step 42, fluorine nuclides left in the chamber after the dielectric etching process 40 are cleaned before the post-etching processing step 44. The flashing step 42 is performed in the same process chamber as that in the dielectric etching process 40.
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