发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, OPTICAL MASK USED THEREFOR, METHOD FOR MANUFACTURING THE SAME, AND MASK BLANKS USED THEREFOR |
摘要 |
When a photomask (1PA1) is installed in a predetermined apparatus such as an inspection apparatus or an exposure apparatus, the photomask (1PA1) is inspected or exposed while the area where no light-shielding pattern (1b) nor mark pattern (1mr) formed of a resist film is present on a major surface of the mask base (1a) of the photomask (1PA1) is in contact with an installation part (2) of the predetermined apparatus. Thus, in a method for manufacturing a semiconductor integrated circuit device by using a photomask for allowing a resist film to serve as a light-shielding film, few or no foreign matters are produced. |
申请公布号 |
WO0102908(A1) |
申请公布日期 |
2001.01.11 |
申请号 |
WO2000JP04339 |
申请日期 |
2000.06.30 |
申请人 |
HITACHI, LTD.;HASEGAWA, NORIO;TERASAWA, TSUNEO;TANAKA, TOSHIHIKO |
发明人 |
HASEGAWA, NORIO;TERASAWA, TSUNEO;TANAKA, TOSHIHIKO |
分类号 |
G03F1/30;G03F1/32;G03F1/54;G03F1/56;G03F1/68;G03F1/70;G03F7/00;G03F7/20;G03F9/00 |
主分类号 |
G03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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