| 摘要 |
An exposure method and device capable of restricting illuminance variations on a wafer to be caused by the transmittance variations of optical members such as a projection optical system on receiving an illuminating light and controlling a luminous exposure with high accuracy, wherein variations in transmittance with respect to an ultraviolet pulse beam (IL) of a projection optical system (PL) is predicted before an exposure operation based on exposure conditions (such as intensity of ultraviolet pulse beam (IL)), whether or not a luminous exposure with respect to a wafer (W) falls within an allowable range is judged, and, if not, an ND filter (41) for reducing the intensity of the ultraviolet pulse beam (IL) is inserted in an optical path between an ArF eximer laser light source (1) and a variable radiation attenuator (6) in an illumination optical system so that the luminous exposure is within the allowable range during an exposure operation.
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