| 摘要 |
In a method for heat treatment of silicon wafers under a reducing atmosphere utilizing an RTA apparatus, in particular, microroughness on silicon wafer surfaces is reduced, thereby improving electric characteristics such as oxide dielectric breakdown voltage and mobility of carriers, and generation of slip dislocations and heavy metal contamination are suppressed. Thus, improvement of yield and productivity, and cost reduction are contemplated. According to the present invention, there is provided a method for heat treatment of a silicon wafer under a reducing atmosphere containing hydrogen using a rapid heating/rapid cooling apparatus, wherein a natural oxide film on a silicon wafer surface is removed, and then the silicon wafer is subjected to a heat treatment under an atmosphere of 100% hydrogen or an inert gas atmosphere containing 10% or more of hydrogen using a rapid heating/rapid cooling apparatus. <IMAGE> |
