发明名称 |
Nitride semiconductor light-emitting and light-receiving devices |
摘要 |
A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.
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申请公布号 |
US6172382(B1) |
申请公布日期 |
2001.01.09 |
申请号 |
US19980004925 |
申请日期 |
1998.01.09 |
申请人 |
NICHIA CHEMICAL INDUSTRIES, LTD. |
发明人 |
NAGAHAMA SHINICHI;SENOH MASAYUKI;NAKAMURA SHUJI |
分类号 |
H01L21/20;H01L33/04;H01L33/32;H01S5/32;H01S5/323;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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