发明名称 WASTE GAS TREATING DEVICE FOR SEMICONDUCTOR PRODUCTION DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To efficiently treat fluoride which is chemically stable by connecting a branched route for removing the waste gas discharged from a semiconductor production device at a proceeding stage of a vacuum pump and disposing a vacuum pump for sucking the waste gas and a device for treating the fluoride in the waste gas. SOLUTION: The branched route 11 is connected at the proceeding stage of the vacuum pump 5 provided at a waste gas route 2 from the semiconductor production device 1 to a waste gas treating device 3 by interposing the vacuum pump 5. Then a pretreating device 7, a vacuum pump 12 and a fluoride recovering device 4 are disposed in order at the branched route 11. In other words, the branched route 11 is disposed for removing the waste gas from the waste gas route 2 and for sending the waste gas to the fluoride recovering device 4 when the waste gas containing the fluoride which is chemically stable is discharged from the semiconductor production device 1, and a pair of switching valves 13 and 14 for switching a waste gas flow direction are provided at the waste gas route 2 and a branched part of the branched route 11. In this way, the recovery of the fluoride is efficiently executed.</p>
申请公布号 JP2001000837(A) 申请公布日期 2001.01.09
申请号 JP19990176840 申请日期 1999.06.23
申请人 NIPPON SANSO CORP 发明人 NITTA AKIHIKO;SUGIMORI YOSHIAKI
分类号 B01D53/68;B01D53/34;(IPC1-7):B01D53/68 主分类号 B01D53/68
代理机构 代理人
主权项
地址