Method for fabricating a capacitor

摘要

A method for fabricating a capacitor. A first metal layer is formed on a provided substrate. A dielectric film is formed on the first metal layer. The dielectric film can be a mono-layer structure or a multi-layer structure comprising various dielectric materials. A rapid thermal process (RTP), such as a rapid thermal annealing, or a plasma treatment is performed to enhance the quality of the dielectric film. A photolithography and etching process is performed to remove a part of the dielectric film and the first metal layer to expose a part of the inter-layer dielectric layer. The remaining first conductive layer is used as a lower electrode. A conventional interconnect process is performed on the exposed inter-layer dielectric layer and on the dielectric film. For example, a glue layer is formed on the exposed inter-layer dielectric layer and on the dielectric film. A second metal layer is formed on the glue layer. A photolithography and etching process is performed to remove a part of the second conductive layer. The second metal layer remaining on the inter-layer dielectric layer is used as a wiring line for interconnection. The glue layer remaining on the dielectric film is used as an upper electrode.