首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
Source/drain and lightly doped drain formation at post interlevel dielectric isolation with high-K gate electrode design
摘要
申请公布号
US6172407(B2)
申请公布日期
2001.01.09
申请号
US09/061552
申请日期
1998.04.16
申请人
发明人
分类号
主分类号
代理机构
代理人
主权项
地址
您可能感兴趣的专利
DEVICE FOR SWITCHING WAVEGUIDE
METHOD OF FORMING MEMBERS COMPRISING MOULDED PARTS SURROUNDED BY METAL SHEATHING
PAINTABLE RUBBER COMPOSITION AND PRODUCTS PREPARED THEREFROM
PROCESS FOR THE MANUFACTURE OF HOMO-AND COPOLYMERS OF TETRAFLUOROETHYLENE
PLACCA ELETTRODICA PER ACCUMULATORI AL PIOMBO.
SUPPRESSION OF INTERFERING SIGNALS IN AN ELECTRIC MEASURAND TRANSMITTER
MACHINE FOR SEWING UP WEBS OF NETTING
RECEPTACLES FOR PASTEURISATION OF LIQUIDS IN SITU
DENTAL TRAY
CORD-TYPE MOWING DEVICE
AUTOMATIC RADIATION PYROMETER
ERROR-DETECTING DATA TRANSMISSION SYSTEM
METHOD AND APPARATUS FOR COMPRESSION CODING OF A PXQ ARRAY OF BOOLEAN CODED POINTS
EXTRUDED RAIL
PHARMACEUTICAL COMPOSITIONS
DRAWING DIELECTRIC OPTICAL WAVEGUIDES
PRINTING STAMPS
FLUID-CUSHION-SUPPORTED DEVICES AND FLEXIBLE SKIRT MEMBERS THEREFOR
TOBACCO FILTER
BLOW-MOULDED DRUM