Structure of stacked barrier layer

摘要

A structure of a stacked barrier layer is provided. A first titanium layer is formed on a semiconductor substrate using plasma enhanced chemical vapor deposition (PECVD). At least a stacked barrier layer is formed on the first titanium layer. The stacked barrier layer includes a first titanium nitride layer and a plasma treated titanium nitride layer. The plasma treated titanium nitride layer is treated using a plasma gas including ammonia gas and nitrogen gas.