| 摘要 |
In a method wherein semiconductor wafers are accommodated within a treatment furnace that has been heated beforehand to a predetermined temperature, the temperature within the treatment furnace is increased to a predetermined treatment temperature, and the semiconductor wafers are subjected to an oxidation treatment, the temperature-increasing step is performed under a reduced pressure. This makes it possible to suppress the formation of natural oxide films during the temperature-increasing step, and thus makes it possible to form an extremely thin film of a superior quality on the semiconductor wafer.
|
