Method of fabricating a thin film transistor including forming a trench and forming a gate electrode on one side of the interior of the trench,申请号US09/210774-传众专利搜索

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发明名称	Method of fabricating a thin film transistor including forming a trench and forming a gate electrode on one side of the interior of the trench
摘要
申请公布号	US6170815(B2)	申请公布日期	2001.01.09
申请号	US09/210774	申请日期	1998.12.14
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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