| 摘要 |
A Schottky contact of a heterojunction field effect transistor is expressed by a set of regional elements each representative of a line or a region of said Schottky contact, and current components respectively passing through the regional elements are expressed aswhere I is a gate current current, Rk is a length of the line or an area of the region, N is equal to or greater than 3 and Jk is a current density of one of the current components so that an analyst checks the current components to see whether or not the Schottky contact has a trouble.
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