发明名称 |
WASTE GAS TREATING DEVICE FOR SEMICONDUCTOR PRODUCTION DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To efficiently treat fluoride which is chemically stable in waste gas by disposing a device for removing the material to be stuck in the pump and clogging the pump, at a proceeding stage of the vacuum pump for sucking the waste gas from a semiconductor production device and for sending the waste gas to a waste gas treating device and a fluoride treating device. SOLUTION: A removing device 11 for removing the material to be stuck in the vacuum pump and clogging the vacuum pump is disposed at the proceeding stage of the vacuum pump 5 at a waste gas route 2 for discharging the waste gas from the semiconductor production device 1. The clogging of the vacuum pump 5 is prevented even if the flow rate of the pump protecting gas introduced from a protecting gas route 6 is reduced by previously removing the material clogging the vacuum pump by the removing device 11 in this manner. Therefore, a fluoride concn. in the gas flowing into a fluoride recovering device 4 is increased even if the waste gas and the pump protecting gas are mixed at the vacuum pump 5 and the recovering efficiency of the fluoride is economically improved.</p> |
申请公布号 |
JP2001000838(A) |
申请公布日期 |
2001.01.09 |
申请号 |
JP19990176842 |
申请日期 |
1999.06.23 |
申请人 |
NIPPON SANSO CORP |
发明人 |
NITTA AKIHIKO;SUGIMORI YOSHIAKI |
分类号 |
B01D53/68;B01D53/34;(IPC1-7):B01D53/68 |
主分类号 |
B01D53/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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