| 摘要 |
An improved method for fabricating DRAM with a thin film transistor can increase reading and writing speed. In this method, a substrate with a transfer transistor, a word line, a bit line and an interlayer dielectric layer is provided. A bit line contact and a terminal contact are formed in the interlayer dielectric layer. The bit line contact couples to the bit line and the terminal contact couples to the transfer transistor. The terminal contact is a T-shaped structure. An oxide layer is formed to cover the interlayer dielectric layer and the terminal contact to expose the bit line contact. A polysilicon layer is formed to cover the oxide layer and the bit line contact. An ion implantation step is performed to form a first doped region and a second doped region in the polysilicon layer. The polysilicon layer is patterned to make the first doped region into a source region and to make the second doped region into a drain region. The drain region is on one side of the terminal contact corresponding to the source region.
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