| 摘要 |
A self-aligned method for fabricating a ridge-waveguide semiconductor laser uses two photoresist layers in the process. The lower one is photoresist ODUR1013, and the upper one is photoresist AZ5214E. The lower photoresist layer, ODUR1013, can only be developed by light of wavelength less than 300 nm, and the upper photoresist layer, AZ5214E, can only be developed by light of wavelength greater than 300 nm. In the process of forming an opening on the top of the ridge structure, a G-line mask aligner is used to develop the upper photoresist AZ5214E and to expose the lower photoresist ODUR1013. Then, by performing a reactive ion etching (RIE) process, the lower photoresist ODUR1013 and the dielectric within the opening are removed. The remains of the upper photoresist layer, AZ5214E, are used to protect the sidewalls of the ridge structure in the RIE process.
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