发明名称 |
Method of forming a conductive spacer in a via |
摘要 |
A method of constructing a conductive via spacer within a dielectric layer located between a first metal layer and a second metal layer includes the steps of depositing a conductive spacer layer within the opening and over the first metal layer. A portion of the conductive spacer layer is removed to leave a conductive spacer within the opening. The second metal layer is deposited over the spacer to complete the connection between the first and second metal layers. The spacer preferably comprises a material selected from the group comprising refractory metal silicides and nitrides. The spacer is preferably tapered and the via may include a glue layer to improve the adherence of the spacer to the dielectric layer.
|
申请公布号 |
US6171964(B1) |
申请公布日期 |
2001.01.09 |
申请号 |
US19980013633 |
申请日期 |
1998.01.26 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
GONZALEZ FERNANDO;BLALOCK GUY |
分类号 |
H01L21/768;H01L23/522;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|