发明名称 Method of forming a conductive spacer in a via
摘要 A method of constructing a conductive via spacer within a dielectric layer located between a first metal layer and a second metal layer includes the steps of depositing a conductive spacer layer within the opening and over the first metal layer. A portion of the conductive spacer layer is removed to leave a conductive spacer within the opening. The second metal layer is deposited over the spacer to complete the connection between the first and second metal layers. The spacer preferably comprises a material selected from the group comprising refractory metal silicides and nitrides. The spacer is preferably tapered and the via may include a glue layer to improve the adherence of the spacer to the dielectric layer.
申请公布号 US6171964(B1) 申请公布日期 2001.01.09
申请号 US19980013633 申请日期 1998.01.26
申请人 MICRON TECHNOLOGY, INC. 发明人 GONZALEZ FERNANDO;BLALOCK GUY
分类号 H01L21/768;H01L23/522;(IPC1-7):H01L23/48 主分类号 H01L21/768
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