发明名称 |
Methods of forming a contact having titanium silicide formed by chemical vapor deposition |
摘要 |
A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence of hydrogen, to form titanium silicide. In another embodiment, a titanium precursor contacts silicon to form to form titanium silicide.
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申请公布号 |
US6171943(B1) |
申请公布日期 |
2001.01.09 |
申请号 |
US19990377273 |
申请日期 |
1999.08.19 |
申请人 |
MICRON, TECHNOLOGY, INC. |
发明人 |
DOAN TRUNG T.;SANDHU GURTEJ SINGH;PRALL KIRK;SHARAN SUJIT |
分类号 |
C23C16/02;C23C16/14;C23C16/42;H01L21/28;H01L21/285;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
C23C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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