发明名称 METHOD FOR FORMING FINE STRUCTURE PATTERN
摘要 PROBLEM TO BE SOLVED: To provide a novel forming method to mass-produce a fine structural pattern of nm order with excellent reproducibility. SOLUTION: A resist film 3 is formed on one main surface 2A of a substrate 2. The resist film 3 is irradiated with an X-ray 4 through a mask 1 for X-ray exposure to form an exposure pattern 5. By developing the resist film 3, the exposure pattern 5 is selectively removed to form a resist pattern 6. A work 7 formed of a vacuum ultraviolet ray absorbing material is formed on the main surface 2A of the substrate 2 so as to cover the resist pattern 6. A vacuum ultraviolet ray area of the work 7 is irradiated with electronic synchrotron radiation 8 having the wavelength peak in the vacuum ultraviolet ray zone to precipitate a decomposed metal film. The resist pattern 6 is removed to form a fine structural pattern 10 in which a precipitated metal film 9 is deposited between the pitches of the resist pattern 6.
申请公布号 JP2001003176(A) 申请公布日期 2001.01.09
申请号 JP19990159436 申请日期 1999.06.07
申请人 OKAZAKI NATIONAL RESEARCH INSTITUTES 发明人 URISU TSUNEO
分类号 H01L21/302;C23C18/14;C23F4/00;H01L21/027;H01L21/3065;(IPC1-7):C23C18/14;H01L21/306 主分类号 H01L21/302
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