发明名称 Radiation-sensitive semiconductor device and method of manufacturing same
摘要 The invention relates to a radiation-sensitive device comprising a thin radiation-sensitive element (2), in particular a thin photodiode (2). The device includes a substrate (1) on which a photodiode (2) is provided. The surface (5) of the photodiode serves as a semi-pervious mirror (5) through which the radiation (100) enters; a reflecting layer (6) situated between the photodiode (2) and the substrate (1) also serves as a mirror (6). As a result, a so-called resonant cavity effect is possible, resulting, inter alia, in wavelength selectivity of the device. The known device has insufficient wavelength selectivity, which, in addition, cannot readily be set in an accurate and reproducible manner.A device in accordance with the invention is characterized in that the reflecting layer (6) is a metal layer (6) and in that the photodiode (2) is secured to the substrate (1) by means of an adhesive layer (7). By virtue of the high reflectivity of one (6) of the two mirrors (5, 6), the device has a great wavelength selectivity which, in addition, can be readily set in an accurate and reproducible manner. The adhesive layer (7) does not only enable the photodiode (7) to be secured to a substrate (1), which does not have to be a semiconductor substrate, but, this method of securing also enables a very attractive manufacturing method for the entire device to be achieved. A device in accordance with the invention can be advantageously used as a detector in a heterodyne or multiplex optical communication system or in an optical disc system.
申请公布号 US6172408(B1) 申请公布日期 2001.01.09
申请号 US19990273282 申请日期 1999.03.19
申请人 U.S. PHILIPS CORPORATION 发明人 SETO MYRON W. L.;DE JAGER STIENKE;MAAS HENRICUS G. R.
分类号 H01L27/14;H01L31/0216;H01L31/0232;(IPC1-7):H01L31/075;H01L31/105;H01L31/117;H01L37/14 主分类号 H01L27/14
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