HIGH-DENSITY SPUTTERING SINTERED TARGET MATERIAL NOT CRACKED EVEN IN HIGH-SPEED FILM FORMING CONDITION

摘要

PROBLEM TO BE SOLVED: To provide a high-density sputtering sintered target material for forming an electrode thin film for a high dielectric oxide capacitor which is not cracked even in a high-speed film forming condition. SOLUTION: This material is formed from a multiple oxide sintered material expressed by the composition formula of (La, Sr)CoO3 and with its main structural phrase having a perovskite structure. The contents of the carbon (C), sodium (Na) and potassium (K) as inevitable impurities are controlled to <=100 ppm, <=10 ppm and <=5 ppm, respectively and the porosity is kept at <=15%.