发明名称 COMPOSITION FOR FORMING FILM, FORMATION OF FILM AND LOW- DENSITY FILM
摘要 PROBLEM TO BE SOLVED: To obtain a composition for forming a film having excellent dielectric constant characteristics, mechanical strength, etc. SOLUTION: This composition for forming a film comprises (A) a silane compound which is a hydrolyzate and a condensate or either of the hydrolyzate and the condensate of at least one compound selected from the group consisting of a compound of the formula, R1aSi(OR2)4-a (R1 is a hydrogen atom, a fluorine atom or a monofunctional organic group; R2 is a monofunctional organic group; and (a) is an integer of 0-2) and a compound of the formula, R3b(R4O)3-bSi-(R7)d- Si(OR5)3-cR6c (R3, R4, R5 and R6 are each the same or different and a monofunctional organic group; (b) and (c) are each the same or different and an integer of 0-2; R7 is an oxygen atom or a group of -(CH2)n; (n) is 1-6; and (d) is 0 or 1) and (B) a cyclic amine compound or its salt.
申请公布号 JP2001002989(A) 申请公布日期 2001.01.09
申请号 JP19990174344 申请日期 1999.06.21
申请人 JSR CORP 发明人 AKIIKE TOSHIYUKI;GOTO KOHEI;YAMADA KINJI
分类号 B05D3/02;C08G77/18;C08J5/18;C08J9/26;C08K5/09;C08K5/34;C08L33/04;C08L67/00;C08L69/00;C08L71/02;C08L73/02;C08L83/06;C09D183/04;C09D201/00;H01L21/312;H01L21/316;(IPC1-7):C09D183/04 主分类号 B05D3/02
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