| 摘要 |
A semiconductor device includes: a semiconductor substrate; a well region of a first conductivity type formed; a well region of a second conductivity type; a trench isolation region; a source region and a drain region of the first conductivity type; a channel region formed; a gate insulating film; and a gate electrode being electrically connected to the well region of the second conductivity type, wherein the product &tgr;, i.e., CR, of an electrical resistance R of the well region of the second conductivity type and the sum C of junction capacitances between the well region of the second conductivity type and the source region and between the well region of the second conductivity type and the drain region, a junction capacitance between the well region of the second conductivity type and the well region of the first conductivity type and an electrostatic capacitance between the well region of the second conductivity type and an inversion layer formed in the channel region is 5x10-11 seconds or less.
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