| 摘要 |
<p>PURPOSE:To prevent the dielectric breakdown of a gate insulating film by static electricity and to improve the yield of production by forming a conductive metallic film over the entire surface of the rear surface of a substrate and oxidizing this film to an insulating film after the completion of thin-film transistors(TFTs). CONSTITUTION:The conductive metallic film 10 which is to be made into the transparent insulating film by oxidation is formed by a sputtering device to a prescribed film thickness on the rear surface of the transparent substrate 1, i.e., on the surface opposite from the surface to be formed with the TFTs 2 and pixel electrodes 9 prior to the formation of the upper electrodes to be formed of a gate insulating film 4 among the gate electrodes 3 and source and drain electrodes 7, be formed on the transparent substrate 1. Namely, if the conductive metallic film 10 is formed on the rear surface of the transparent substrate 1, the static electricity is grounded from the conductive metallic film 10 to a substrate transporting device, etc., even if the static electricity is generated by the friction contact, etc., from a substrate transporting device, etc., and, therefore, the electrification of the transparent substrate 1 with the static electricity is prevented.</p> |
