发明名称 |
Method for forming a multilevel interconnection with low contact resistance in a semiconductor device |
摘要 |
A method for forming a multilevel interconnection between a polycide layer and a polysilicon layer is disclosed. The multilevel interconnection comprises: forming a first impurity-containing conductive layer on a semiconductor substrate; forming a first silicide layer, having a first region thinner than a second region, on the first impurity-containing conductive layer; forming an interlayer dielectric layer in other than the first region; forming a contact hole for exposing the first silicide layer of the first region; and connecting a second impurity-containing conductive layer to the first silicide layer through the contact hole.
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申请公布号 |
US6171950(B1) |
申请公布日期 |
2001.01.09 |
申请号 |
US19990330129 |
申请日期 |
1999.06.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE YONG-JAE;LEE SOO-CHEOL |
分类号 |
H01L21/768;H01L21/336;H01L23/522;H01L23/532;H01L29/78;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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