| 摘要 |
In order to provide a semiconductor substrate that can be an SOI substrate suitable for production of high-frequency transistor, the semiconductor substrate is produced by a method of producing the semiconductor substrate having a step of bonding a first base having a semiconductor layer region to a second base and a step of removing the first base while leaving the semiconductor layer region on the second base, wherein a magnitude relation between the concentration of a p-type impurity and the concentration of an n-type impurity in the bonding atmosphere is established according to the composition of the second base.
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