发明名称 Integral bump technology sense resistor
摘要 A metalization layer formed as part of a bump connection/flip chip process for a semiconductor circuit is also used to form a sense resistor or other passive components. The metalization layers normal composition can also be altered so as to change or control the value of the so formed resistor or to improve the temperature stability of the resistor. Other passive components such as capacitors or inductor can also be formed in this layer.
申请公布号 AU5876600(A) 申请公布日期 2001.01.09
申请号 AU20000058766 申请日期 2000.06.15
申请人 DALLAS SEMICONDUCTOR CORPORATION 发明人 ROBERT D. LEE;GARY V. ZANDERS;JAMES WALLING;STEVEN N. HASS
分类号 H01L21/60;H01L23/522;H01L23/58 主分类号 H01L21/60
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