| 摘要 |
Methods for producing doped polycrystalline semiconductors and for producing doped monocrystalline semiconductors from predoped monocrystalline and polycrystalline semiconductors. The methods for producing doped polycrystalline semiconductors may include (1) providing a reactor for chemical vapor deposition, (2) creating a vapor within the reactor that includes a silicon compound and a preselected dopant, and (3) providing a substrate, exposed to the vapor, onto which the silicon and the dopant in the vapor are deposited to form doped polycrystalline silicon. The methods for producing doped monocrystalline semiconductors may include (1) selecting a first amount of a first semiconductor, the first semiconductor having a first concentration of the dopant, (2) selecting a second amount of a second semiconductor, and (3) using the first and second amounts to grow a monocrystalline semiconductor having a preselected concentration of the dopant.
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