| 摘要 |
PURPOSE: A self-aligned contact method for a semiconductor device is provided to form a mask insulating layer and an insulating layer spacer by using a conventional stacked structure composed of a silicon oxynitride layer/a silicon-rich oxynitride layer or a silicon oxide layer/the silicon-rich oxynitride layer. CONSTITUTION: A conductive material, the first silicon oxynitride layer and the first silicon-rich oxynitride layer are formed on a semiconductor substrate(11) by a predetermined thickness, and are patterned to form a conductive interconnection. A spacer of a stacked structure composed of the second silicon oxynitride layer and the second oxynitride layer are formed on a sidewall of the conductive interconnection. An interlayer dielectric (23) for planarizing the entire surface is formed. A contact hole (25) exposing a reserved portion of the semiconductor substrate is formed by a self-aligned method.
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