METHOD FOR MANUFACTURING A GATE ELECTRODE OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a gate electrode of a semiconductor device is provided to prevent a characteristic of the device from being deteriorated by forming an oxidation layer as a gate insulating layer of an N-type gate electrode, and to prevent boron impurities from diffusing to a silicon substrate by forming a nitride oxidation layer as a gate insulating layer of a P-type gate electrode. CONSTITUTION: A silicon substrate(10) having the first region(11) and the second region(12) is prepared. A nitride oxidation layer(30) is formed on the silicon substrate. The nitride oxidation layer in the first region is eliminated. An oxidation layer is formed on the silicon substrate in the first region. The first gate electrode and the second gate electrode are formed on the nitride oxidation layer and oxidation layer with a semiconductor layer.