| 摘要 |
PURPOSE: A method for manufacturing a thin film transistor(TFT) substrate for a liquid crystal display is provided to reduce a manufacturing cost by simplifying the process for forming the TFT substrate, and to stabilize a manufacturing process without using an indium tin oxide(ITO) etchant having a great effect on other thin films. CONSTITUTION: A gate interconnection(22) is formed on an insulating substrate. A gate insulating layer, an amorphous silicon layer, a doped amorphous silicon layer, a chrome layer and a data conduction layer are sequentially deposited on the gate interconnection. The amorphous silicon layer, the doped amorphous silicon layer and the data conduction layer are patterned to form a data interconnection wherein a source electrode(65) and a drain electrode(66) are connected, and to form a contact layer pattern and a semiconductor layer pattern under the data interconnection. A transparent conduction layer composed of indium tin oxide(ITO) is deposited and patterned to form a pixel electrode(71) and a redundancy data interconnection(72,74,75). Simultaneously, the data interconnection is etched to separate a source electrode and a drain electrode. The exposed contact layer is etched away, and a passivation layer is formed thereon.
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