发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to stably operate a power drive by meshing a power line within a memory array. CONSTITUTION: A semiconductor memory device includes a sense amplifier(S/A), four power lines, a memory array mat, a subword driver(SWD), 16 word line driving control lines and 32 word lines(MWL). The 4 power lines are arranged in a vertical direction of the sense amplifier. The 16 word line driving control lines are arranged in a vertical direction of the memory array mat and the subword driver. The 32 word lines are arranged in a vertical direction of the memory array mat and the subword driver. 2 power lines(VDDCLP,VSSA) are additionaly arranged in the vertical direction of the sense amplifier. Power lines vertically crossing on the subword drivers and the sense amplifier are contacted each other.
申请公布号 KR20010002121(A) 申请公布日期 2001.01.05
申请号 KR19990021760 申请日期 1999.06.11
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 JUNG, SEUNG HO;YOEN, EUN SUK
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
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