发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A semiconductor memory device is provided to stably operate a power drive by meshing a power line within a memory array. CONSTITUTION: A semiconductor memory device includes a sense amplifier(S/A), four power lines, a memory array mat, a subword driver(SWD), 16 word line driving control lines and 32 word lines(MWL). The 4 power lines are arranged in a vertical direction of the sense amplifier. The 16 word line driving control lines are arranged in a vertical direction of the memory array mat and the subword driver. The 32 word lines are arranged in a vertical direction of the memory array mat and the subword driver. 2 power lines(VDDCLP,VSSA) are additionaly arranged in the vertical direction of the sense amplifier. Power lines vertically crossing on the subword drivers and the sense amplifier are contacted each other.
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申请公布号 |
KR20010002121(A) |
申请公布日期 |
2001.01.05 |
申请号 |
KR19990021760 |
申请日期 |
1999.06.11 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO., LTD. |
发明人 |
JUNG, SEUNG HO;YOEN, EUN SUK |
分类号 |
G11C11/407;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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