发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING MULTIPLE INPUT/OUTPUT
摘要 PURPOSE: A semiconductor memory device is provided to have multiple input/output so that total size can be reduced. CONSTITUTION: A semiconductor memory device includes DRAM(Dynamic Random Access Memory) cells(30,32), input/output multiplexers(33,34), a row decoder(31), a column decoder(35), a control circuit(38) and multiplexers(39.1-39.n). The DRAM cells(30,32) are controlled by addresses of two groups. The input/output multiplexers(33, 34) transfers data from l input/output lines of the DRAM cells(30,32) to n input/output lines of SRAMs(Static Random Access Memories, 36,37). The column decoder(35) controls a multiplexing operation of the input/output multiplexers(33,34) by decoded signals of addresses of the two groups. According to the multiple input/output, total size of the semiconductor memory device can be reduced.
申请公布号 KR20010002115(A) 申请公布日期 2001.01.05
申请号 KR19990021752 申请日期 1999.06.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, HO YEOL;YOON, HONG GU
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
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