METHOD FOR FABRICATING A NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a non-volatile memory device is provided to reduce a critical dimension of a space between floating gates by simplified process and to minimize a loss of a field oxide layer by implementing the sidewalls of the floating gate as an inclined profile. CONSTITUTION: In a step for removing a silicon nitride layer remaining on an upper portion of a floating gate(104) by a strip process using phosphoric acid, the first and the spacers of silicon nitride are simultaneously removed. As a result, the floating gate(104) is formed on the entire portion of an active region and partially extended to an edge portion of a field region. Therefore, the floating gate(104) is separated from that of an adjacent memory cell. Furthermore, in a photolithography process for patterning the floating gate, a loss of the field oxide layer can be prevented and a high coupling coefficient between the floating gate and a control gate can be maintained.