| 摘要 |
The semiconductor circuit (1) comprises electronic components or elements selectively connected and implemented at several levels, where at least two components or elements are connected to two respective portions of strip conductors (6,8; 7,9) belonging to the same level of metallisation (2); the two portions have adjacent parts situated in a zone (12,14) above which the circuit is free from electronic components or strip conductors. The circuit configuration is altered by making wells (15) in marked locations above zones (12,14) to expose the adjacent parts of strip conductors and to deposit a connection material (18,19) at the bottom of wells to electrically connect the portions of strip conductors and consequently the electronic components or elements. The adjacent parts of strip conductors are their extremities separated by a spacing which is at most equal to the width or thickness. At least one of electronic components is connected to another strip conductor (3) having a part situated in a marked zone above which the circuit is free from electronic components or strip conductors, where another well (17) is made to expose the part of strip conductor and to section the part in order to disconnect the components connected on two sides of sectioning (20). The making of wells (15,17), the deposition of connection material (18,19), the sectioning (20) and oxide deposition (21) are carried out by use of focused ion beam (FIB) technology. |
