| 摘要 |
PURPOSE: A method for fabricating a GaN semiconductor light emitting device is provided to increase light emitting efficiency caused by recombination of electrons in an N-type crystallization growth layer and holes in a P-type crystallization growth layer, by preventing a nitrogen out-diffusion and a hydrogen penetration. CONSTITUTION: An N-type contact layer, an N-type clad layer, an active layer, a P-type clad layer and a P-type contact layer are sequentially stacked on a substrate. After the P-type contact layer is formed, the stacked structure is cooled down in an inert gas atmosphere to prevent a nitrogen out-diffusion in a crystallization growth layer and an increase of a hydrogen ion density. The inert gas includes N2, Ar, He or Ne. |
