METHOD FOR FABRICATING A GAN SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A method for fabricating a GaN semiconductor light emitting device is provided to increase light emitting efficiency, by forming a P-type crystallization growth layer having a high hole density by performing a high temperature heat treatment in an oxygen atmosphere. CONSTITUTION: An N-type contact layer, an N-type clad layer, an active layer, a P-type clad layer and a P-type contact layer are sequentially stacked on a substrate. A lot of hydrogen existing inside is eliminated by performing a high temperature heat treatment in an oxygen atmosphere after the P-type contact layer is formed. The quantity of nitrogen gas is uniformly maintained and the quantity of oxygen gas is controlled at 5-50 sccm, so as to make the oxygen atmosphere.