| 摘要 |
PURPOSE: A method for manufacturing a fine pattern of a semiconductor device is provided to control a notching phenomenon in an exposure process for forming the fine pattern having a reserved size, by forming a three-layer photoresist layer using an intermediate layer with an anti-reflection layer characteristic. CONSTITUTION: A lower photoresist layer(15) for planarizing the surface of a semiconductor substrate(11) having a layer(13) to be etched. An intermediate layer having an anti-reflection layer characteristic is formed on the lower photoresist layer. An upper photoresist layer pattern is formed on the intermediate layer. The intermediate layer is etched to form an intermediate layer pattern by using the upper photoresist layer pattern as a mask, using a C-F based plasma. The lower photoresist layer is etched to form a lower photoresist layer pattern by using the intermediate layer pattern while the intermediate layer pattern remaining on the lower photoresist layer pattern is eliminated by a C-F based plasma. The layer to be etched is patterned by using the lower photoresist layer pattern as a mask.
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