| 摘要 |
PURPOSE: A sense amplifier of a semiconductor memory device is provided to increase intensity and to perform fast and stably a sensing operation though a supply voltage goes low. CONSTITUTION: A sense amplifier of a semiconductor memory device includes a reference voltage generator(200), a sense voltage generator(100), an inverter(300) and a first switch(400). The reference voltage generator generates a reference voltage and outputs the reference voltage to a reference node. The sense voltage generator connects with the reference node, generates a sense voltage in response to a state of memory cells and outputs the sense voltage to a sense node. The inverter connects with the sense node, detects whether a level of the sense voltage is higher than a predetermined inverted voltage level and outputs logic low or logic high. The first switch is connected between a supply voltage and the sense node and becomes on or off in response to a first sense amp enable signal. When the first switch becomes on, the supply voltage is supplied to the sense node and when the first switch becomes off, the supply voltage is not supplied to the sense node.
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