| 摘要 |
PURPOSE: A method for fabricating a semiconductor device having different unit devices with different characteristics is provided together with a simplified process. CONSTITUTION: A silicon substrate(11) is provided with different unit devices(A,B) divided by a field oxide layer(12) and each including a gate insulating layer(13,130), a gate electrode(14,140), a sidewall spacer(15,150), and a source/drain region(16,160). Then, a metal layer(19) having a high melting point such as titanium or cobalt is deposited on the top surface of the substrate(11). Next, oxygen ion is implanted while a photoresist pattern(18) covers the first unit device(A). Therefore, the oxygen ion is combined with the metal layer(19) on the second unit device(B), and thus the oxygen-combined metal layer(19) acts as an anti-silicide layer. During the subsequent annealing process, the metal layer(19) on the first unit device(A) forms a metal silicide layer. However, no silicide layer is formed on the second unit device(B) due to the anti-silicide layer.
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