TRANSISTOR III-V A HETEROJONCTION, NOTAMMENT TRANSISTOR A EFFET DE CHAMP HEMT OU TRANSISTOR BIPOLAIRE A HETEROJONCTION

摘要

The invention concerns a heterojunction transistor comprising III-V semiconductor materials with a wide forbidden band material and a narrow forbidden band material. The narrow forbidden band material is a III-V compound containing gallium as one of the III elements and both arsenic and nitrogen as V elements, the nitrogen content being less than about 5 %, and the narrow forbidden band material comprising at least a fourth III or V element. The addition of said fourth element enables to adjust the width of the forbidden band, the discontinuity of the conduction band DELTA Ec and the discontinuity of the valence band DELTA Ev of the heterojunction. The invention is useful for producing HEMT field effect transistors with low forbidden band, therefore with high drain current. The invention is also useful for producing heterojunction bipolar transistors with low VBE, therefore capable of functioning with low supply voltages.