Making connection and quantum conduction barrier between two semiconductor regions differing in crystalline nature and separated by insulant, carries out all high temperature operations in same CVD unit

摘要

Layers of non-doped silicon, quantum conduction barrier (QCB), double layers are formed, with doped layer forming a connection with the QCB. The structure is heated to activate the dopants, to permit electrical continuity between semiconductor regions through the QCB, by a quantum-mechanical effect, in which all stages are carried out in situ in the same CVD deposition unit. A thin, continuous amorphous non-doped silicon layer is formed to cover the regions. A quantum conduction barrier (QCB) layer is formed on the structure. At least one double layer is formed, comprising a layer of non-doped amorphous silicon and at least one monolayer of dopant on the QCB, to finish the connection and QCB barrier. The structure is heated to activate the dopants, to permit electrical continuity between semiconductor regions through the QCB, by a quantum-mechanical effect, in which all stages are carried out in situ in the same CVD deposition unit.