METHOD AND APPARATUS FOR MEASURING DOPING CONCENTRATION AND FINE HOLE OF SEMICONDUCTOR SURFACE USING OPTICAL FIBER PROBE AND SUPERCONDUCTIVITY QUANTUM INTERFERENCE DEVICE

摘要

PURPOSE: A method and an apparatus for measuring doping concentration and fine hole of semiconductor surface are provided so that a doping concentration and the existence of minute holes can be inspected without damage by using non-contacting type and non-destructive inspection. CONSTITUTION: A light beam condensing and irradiation unit condenses light(10) to an optical fiber and irradiates it to a semiconductor material(40) or a fine hole formed on an insulting layer of the semiconductor material(40). The light beam condensing and irradiation unit includes an optical fiber(32) for transmitting light; a light condenser(31) for condensing light to the optical fiber through an optical lens. An excited electron condensing and current producing unit includes an optical fiber probe electrode(33) formed by coating the remnant portion except for the opening portion of the optical fiber probe with metal, and a voltage supplier(50) for applying a voltage through a conduction line(51). A current measuring unit includes a SQUID(60), as a sensor for measuring magnetic filed, connected between the optical fiber probe electrode(33) and voltage supplier(50).