发明名称 CIRCUIT FOR REGULATING THRESHOLD VOLTAGE OF REFERENCE CELL FOR READING WITHIN FLASH MEMORY
摘要 PURPOSE: A circuit for regulating a threshold voltage is provided to set a range of threshold voltage of a reference cell for reading to be narrower than that of a main cell, so that sensing margin of the main cell is increased. CONSTITUTION: A circuit for regulating a threshold voltage includes a reference current setting part(10), a reference voltage programming part(20) and a reference cell part(30). The reference current setting part(10) sets a current according to an external reference voltage(VEXTREF), and outputs the set current as a program control signal(PGM). The reference voltage programming part(20) programs reference cells according to the program control signal(PGM) from the reference current setting part(10). The reference cell part(30) programs reading reference cells according to the program control signal(PGM) from the reference current setting part(10) or the reference voltage programming part(20), and sets a programming value for main cells(40) according to a programming value for the reading reference cells.
申请公布号 KR20010001063(A) 申请公布日期 2001.01.05
申请号 KR19990020042 申请日期 1999.06.01
申请人 HYUNDAI MICRO ELECTRONICS CO., LTD. 发明人 JUNG, WON HWA
分类号 G11C16/00;(IPC1-7):G11C16/00 主分类号 G11C16/00
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